Ultrathin Carbon Speeds Circuits
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Sheets of graphite only a few atoms thick could lead to ultrafast computer chips.
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Work is a step toward practical molecular memory devices
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A new class of material, which brings computer chips made from a single molecule a step closer, has been discovered by scientists.
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By Subashini Selvaratnam  INTEL Corp is working on a new 45-nanometre (nm) transistor technology which will boost the processing speeds in personal computers (PCs), laptops and servers.
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The new NAND chip design will increase throughput up to 5X
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(InfoWorld) - IBM Corp. has taken a large stride in its race with Intel Corp. to make faster, smaller chips by building silicon transistors from a rare combination of metals. Both companies announced in January that they had discovered theÂ special materials needed to build "high-k metal gate" transistors. The special materials are much better insulators than standard silicon dioxide, a crucial trait as chip designers struggle to fit more and more transistors on each microprocessor, since electricity tends to leak from the closely-packed wires, making them hot and inefficient. Until now, neither company had announced the ingredients of this new mix of materials. But IBM researchers said on Monday they had used their Blue Gene supercomputer to model 50 combinations of hafnium dioxide and basic silicon. The company plans to build chips based on the new mixture in 2008. The new material looked good in theory, but IBM engineers had to create simulations of different mixtures to avoid any surprises when they added it to semiconductor production lines, said Alessandro Curioni, a supercomputing expert at IBM's Zurich Research Laboratory. Curioni was one of three authors who published this research in a paper published in the January edition of the scientific journal Physical Review Letters. The team used new algorithms and a Blue Gene/L supercomputer with 4,096 processors to crunch the numbers. The program took about five days to run a simulation for each combination of ingredients, modeling the interaction between individual particles for the 600 atoms in every model. If the researchers had used a typical notebook PC, the 250-day job would have taken them 700 years, he said. Despite IBM's advance, Intel insists it is on track to reach markets first with chips using its own type of "high-k metal gate" transistors. Intel plans to use the technology in a family of 45-nanometer architecture chips scheduled for launch later in 2007, the company said. Â
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A new memory technology, programmable metallization cell, could be 1000 times more efficient than flash memory.
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Implemented using Texas Instruments&#39; 90 nanometer process technology, UltraSPARC IV+ will double the application throughput of the existing UltraSPARC IV through expanded caches and buffers, a better branch prediction mechanism, augmented prefetching
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The manufacturing technology can result in faster chips without increasing power requirements, say the companies. By Darrell Dunn.
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New software would make it easier to build computer chips made from carbon nanotubes and assembled by DNA.
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Chip-making technique to fuel AMD64, PowerPC, 'Cell' production
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Based on a new theory, MIT scientists may be able to manipulate carbon nanotubes -- one of the strongest known materials and one of the trickiest to work with -- without destroying their extraordinary electrical properties. The work is reported in the Sept.
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A dense thin film of carbon nanotubes is transparent, electrically conductive and flexible -- key properties for making flexible displays.
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In an advance that could lead to lighter spacecraft and smarter cars, researchers have developed a new technique for producing a high-quality computer chip that is much more resistant to extreme conditions than the silicon found in most of today&#39;s
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Companies will use strained silicon to boost transistor speed.
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US researchers demonstrate a system to transfer energy to devices without the need for wires.
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Using electric fields to alter the electrical properties of a carbon nanotube on the fly makes for a key nanoscale electronic component.