Strained silicon to accelerate transistors by 24 percent
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AMD and IBM have developed a strained silicon transistor technology which the firms believe will dramatically increase processor performance.
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Moore's Law isn't alone. Many technologies now improve so quickly it boggles the mind.
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In an advance that could lead to lighter spacecraft and smarter cars, researchers have developed a new technique for producing a high-quality semiconductor that's much more resistant to extreme conditions than the silicon found in most of today's electronics.
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Thanks to a new &#39;Dual Stress Liner&#39; strained silicon manufacturing technique, AMD and IBM today announced that new Athlon64 and Power processors, set to debut in early 2005, could offer a performance boost of up to 24 percent.
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Microprocessor maker AMD and IBM have developed a strained silicon transistor technology aimed at improving processor performance and power efficiency.
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The issue: 65-nm and 45-nm chip components have shrunk so far that they are now smaller than the wavelength of the light used to carve those features onto silicon chips. To fight that trend, AMD and IBM said they will use three new technologies to boost manufacturing efficiency.
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IBM and Advanced Micro DevicesÂ (AMD) have jointly developed a new method for implementing strained silicon technology on both positive and negative transistors, the companies are expected to announce Monday.
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TechWeb - The smaller the design, the more transistors can be built on microprocessor, increasing its performance to power ratio.
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The new NAND chip design will increase throughput up to 5X
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Device boosts prospects for inexpensive quantum cryptography and quantum computing.
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Researchers at IBM IBM.N and  Advanced Micro Devices Inc. AMD.N have improved a chip-making  technology called strained silicon, boosting  semiconductor  performance at a time when such gains are increasingly hard to  come by, the companies said on Sunday.
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This time they mean it For years graphene has proved a cruel temptress for the semiconductor avant garde. The material - a layer of carbon atoms grouped in the ever popular honeycomb lattice - promised major performance gains over silicon. The problem with the stuff, however, has been arranging it in a large enough layer to replicate the 8- to 12-inch circular wafers favored by the major chip makers.â¦
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SANTA CLARA, CALIFORNIA -- Intel is drawing the curtain on some of its future research projects to continue making transistors smaller, faster, and less power-hungry out as far as 2020.
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AMD and IBM in collaboration have developed a new technology that can lead to massive increase in processor power. They call it strained silicon transistor and tests have shown it resulted in a 24% increase in performance.
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IBM says it has found the answer: New technology that squeezes more memory onto a slice of silicon. By the Associated Press.
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Intel will try to further cut power consumption in its next generation of chips by using improved strained silicon, along with transistors that block power to other circuits, and other added features.
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Researchers have made analog electronics out of carbon nanotubes.