Memory Breakthrough Doubles Chip's Density
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Intel and STMicroelectronics have doubled the density of their new phase-change memory chips, which could replace flash memory in the future.
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For decades, computer performance has been driven largely by the increasing numbers of ever-smaller transistors squeezed into the machines&#39; silicon brains.
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By Subashini Selvaratnam  INTEL Corp is working on a new 45-nanometre (nm) transistor technology which will boost the processing speeds in personal computers (PCs), laptops and servers.
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A new inexpensive nanoglue that becomes stronger as it heats up could redefine the way computer chips are made.
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Samsung Electronics Co. on Monday unveiled a new type of memory chip that it said will allow digital devices to work faster by saving new data more quickly.
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Intel has built a fully functional 70Mb static random access memory (SRam) chip with more than half a billion transistors, using 65nanometer (nm) process technology.
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This morning, IBM confirmed to BetaNews that later this afternoon, its engineers are scheduled to demonstrate their own concept chip, which will utilize an embedded memory architecture for caching.  The company is saying it could double the performance of existing 65 nm processors and future generations by tripling its cache memory capacity and perhaps increase the throughput of that memory tenfold.
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A small, fully functional, 70-megabit static random access memory computer chip crammed with more than 500,000,000 transistors has been developed by researchers at Intel Corp.
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The company plans to present a paper this week outlining a new type of memory that could help boost processor performance.
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A half century after transistors were first integrated onto silicon chips, the technology for shrinking them appears to be reaching its limit. Without the regular, dramatic performance improvements we've come to expect, the computer industry may hit a wall.
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By JORDAN ROBERTSON  SAN JOSE, Calif. - IBM has devised a way to triple the amount of memory stored on computer chips and double the performance of data-hungry processors by replacing a problematic type of memory with a variety that uses much less space on the slice of silicon.
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IBM has devised a way to triple the amount of memory stored on computer chips and double the performance of data-hungry processors by replacing a problematic type of memory with a variety that uses much less space on the slice of silicon.
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Chip-making technique to fuel AMD64, PowerPC, 'Cell' production
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Samsung Electronics has developed a chip-manufacturing technique able to significantly increase the amount of music, pictures, videos, and other data people can store in future iPods, iPhones, and other devices.The world&#39;s largest memory chip maker showed off a 64Gb multilevel cell (MLC) NAND flash memory chip made with an entirely new 30-nanometer production technology. A nanometer is a billionth of a meter, and the measure refers to the average size of the smallest features on the chip. The manufacturing breakthrough, which Samsung calls self-aligned double patterning technology (SaDPT), will enable the company to greatly increase the storage capacity of new NAND flash memory chips once the technology is in commercial production.For example, 16 of the 64Gb chips can be combined in a memory card for 128GB of storage space, enough for 80 DVD movies or 32,000 MP3 music files, the company said in a statement.Even more important for users, Samsung was able to make the technology leap without requiring certain expensive new chip making equipment. While moves to smaller production technologies often require investment in expensive new photolithography equipment, the company was able to use current photolithography gear to etch circuits on the silicon wafers. That should ensure low production costs and reasonable prices for end-users.SaDPT technology uses two pattern transfers to create the circuit design of each chip. The first transfer spaces the circuits widely apart, then the second transfer uses that space between the circuits to add another circuit, with the result that the circuitry is more densely packed together.Samsung has applied for 30 patents related to the new 64Gb flash chip, and said it also created a 32Gb chip with the same production technology. The company expects to begin mass production of 64Gb flash chips with its 30nm manufacturing technology in 2009.
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A new memory technology, programmable metallization cell, could be 1000 times more efficient than flash memory.
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Big Blue comes up with a way to cram more memory directly onto its processors, boosting performance starting in 2008.
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SANTA CLARA, Calif., - Intel Corporation has built fully functional SRAM (Static Random Access Memory) chips using 65 nanometer (nm) technology, its next generation high-volume semiconductor manufacturing process.