Intel, IBM Reveal Transistor Overhaul
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In dueling announcements, Intel Corp. and IBM separately say they have solved a puzzle perplexing the semiconductor industry about how to reduce energy loss in microchip transistors
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DECEMBER 13, 2004 (IDG NEWS SERVICE) - IBM and Advanced Micro Devices Inc. announced today that they have jointly developed a new method for implementing strained silicon technology on both positive and negative transistors.
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IBM and Advanced Micro Devices have announced that they have produced a silicon chip with a marked improvement in speed by using strained silicon technology.
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New nonsilicon transistors could be integrated into existing chip-making processes.
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It looks like a partnership between AMD, IBM, Sony and Toshiba has produced a new technology which allows faster transistor speeds with the same energy consumption.
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Intel (Quote, Chart) has built a new chip with 500 million transistors using the latest advancements in nanotechnology, the company said Monday.
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Intel Corp., the world&#39;s biggest semiconductor maker, said it built a test chip with a new process that creates faster circuits by packing 10 million transistors into an area the size of the tip of a ball-point pen.
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Researchers at IBM  and Advanced Micro Devices Inc.  have improved a chip-making technology called strained silicon, boosting  semiconductor performance at a time when such gains are increasingly hard to come by, the companies said on Sunday.
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For decades, computer performance has been driven largely by the increasing numbers of ever-smaller transistors squeezed into the machines' silicon brains. With each generation, speeds jumped and prices dropped.
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Researchers at IBM IBM.N and  Advanced Micro Devices Inc. AMD.N have improved a chip-making  technology called strained silicon, boosting  semiconductor  performance at a time when such gains are increasingly hard to  come by, the companies said on Sunday.
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Semiconductor chips that can manage a good bit of their own upkeep are moving closer to reality.
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IBM Corp. (NYSE: IBM) and Advanced Micro Devices (NYSE: AMD) said Monday that they have developed a strained silicon transistor technology aimed at
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SANTA CLARA, CALIFORNIA -- Intel is drawing the curtain on some of its future research projects to continue making transistors smaller, faster, and less power-hungry out as far as 2020.
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Intel Corp., which has led the charge in the gigahertz race, is expected to change its tune at this week&#39;s developer forum in San Francisco by focusing on improving chip performance by adding more cores to the microprocessor.
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Processors will feature enhanced power management technology.
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Intel will try to further cut power consumption in its next generation of chips by using improved strained silicon, along with transistors that block power to other circuits, and other added features.
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IBM has successfully demonstrated a new technique for improving transistor performance that will help the company build smaller, more powerful chips in the next decade, company researchers said Monday.