Nano Memory Scheme Handles Defects
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Work is a step toward practical molecular memory devices
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Using advanced "nanopatterning" techniques, IBM researchers plan to build 100TB tape storage devices.
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Forcing a trio of incompatible molecules together yields multi-compartment nano containers.
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Samsung Electronics Co., Ltd., the world leader in advanced memory  technology, announced today that it has begun mass producing the industry's  first 1Gigabit (Gb) DDR2 DRAM (dynamic random access memory) using 60  nanometer (nm)--class process technology.
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A new type of memory could soon be available to device makers.
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IBM has demonstrated a way to store data in a single atom, a technique that could someday be used in tiny processors.
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Intel and STMicroelectronics have developed a new type of PCM (phase-change memory) chip that doubles the memory density over previous versions, giving a boost to an emerging technology that could one day replace the flash memory chips widely used in portable devices.The technology is still experimental, but the companies marked another step in its evolution, delivering samples of the new chips to device makers. Proponents say that PCM is more reliable than flash memory, and that it will offer faster data transfer speeds and be more durable.PCM uses a glass-like material that can change from an amorphous, or gaseous, state to a crystalline state as its atoms are rearranged. The state of the material corresponds to the 1s and 0s in computing, allowing it to be used to store data.As a result of their work, Intel and STMicro said the glass-like material can now be turned into four states instead of two, allowing it to retain twice the amount of data. The material can also exist in liquid and semi-liquid states.The advances from Intel and STMicro have made the chips smaller and more power-efficient, said Guilio Casagrande, director of advanced research and development at STMicro.Intel and STMicro presented their new developments on Wednesday at the International Solid States Circuits Conference in San Francisco.Numerous other companies have also been working on PCM, also known as PRAM, including IBM, Qimonda, Macronix, Infineon and Samsung.Phase-change memory has existed since the 1960s, but the cost of the technology and the energy required to drive change between one state and another was not competitive compared to other memory technologies like RAM and flash, said Cliff Smith, technology initiatives manager of Intel&#39;s flash group.PCM has the potential to give fast read and write speeds, while the existing NOR flash type is slow to write and NAND flash is slow to read, Casagrande said. PCM could eventually replace existing memory technologies because of its power efficiency and its ability to reduce data leaks, Casagrande said.Intel and STMicroelectronics signed a contract to develop PCM in 2003 and are in the process of establishing a flash-memory joint venture called Numonyx, due to launch by March 28. STMicro will hold a 48.6 percent stake of Numonyx, with Intel retaining 45.1 percent. The investment company Francisco Partners is also taking part.Numonyx will manufacture existing flash memory types until PCM is ready for market, Smith said. He expects PCM to appear first in devices such as cell phones in two to three years. Its use will eventually overtake that of DRAM, NOR, and NAND flash, he said.
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Dynamic RAM is enjoying a boost in mobile devices, which are hungry for small, cool, power-efficient chips.
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A new carbon-based nanoscale material could be used to make ultrafast computers.
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Companies are developing MRAM, which could be used in portable electronic devices.
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A researcher has posted proof-of-concept code for a zero-day flaw within Mac OS X dealing with its handling of disk image (.dmg) files. The issue causes a memory corruption vulnerability that could allow attackers to execute arbitrary code.
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World Leading Performance of PuRAM Solid State Technology in  Micro-Raid Array Design, to Get inside Cell Phones, Digital Cameras,                    and Ultra-Portable Media Devices     L International Computers Inc.
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A novel nanolaser could cram more data onto a hard disk.
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(InfoWorld) - Samsung Electronics showed off its first 40-nanometer chip, a 32Gb NAND flash memory that can be used in memory cards able to store up to 64GB of data, or 40 movies. The latest step into smaller chip manufacturing methods brings Samsung to the forefront of chip production putting it ahead of other bit manufacturers, including Intel, which has onlyÂ announced chips built at 45nm. The chips are also the seventh generation of NAND flash memory to follow in a Moore's law-type theory posited by Samsung, that the company will double the capacity of NAND flash every 12 months. Such advances are vitalÂ to the consumer electronics industry. Users are demanding ever smaller devices that can do more, such as handsets with built-in mobile phone, computing, camera, and digital music playing functions. Demand for more storage to keep photos, videos, songs and other data has expanded rapidly over the past few years, and analysts expect the trend to continue. The 40nm chip production technique is key to making chips smaller, faster, more powerful, and cheaper to produce. A nanometer is a billionth of a meter, and the measurement is a guide to the size of the transistors and other parts that are etched onto the chips. Typically, the more transistors, and the closer they are together, the faster the chip can perform tasks. The company also revealed a new design technique, Charge Trap Flash (CTF), that will allow it to eventually shrink NAND chip features to 20nm, and produce 256Gb chips. In the 32Gb chips, the control gate in the CTF is only a fifth as big as conventional control gates on chips in a typical floating gate structure. With CTF, there is no floating gate. Instead, data is temporarily placed in a holding chamber made of silicon nitride. Samsung also released a new chip for its hybrid drives, a kind of hard disk drive aimed at laptops that uses NAND flash as a disk cache, to speed boot-up times and reduce power consumption The new chip, dubbed an SoC (system-on-chip) because it does the work of several chips, incorporates up to 4GB of NAND flash as a data buffer and helps further speeds boot-up times while lengthening battery life, the company said. The chips will be in mass production in November. Samsung is one of several companies working on hybrid drives. Seagate TechnologyÂ and IntelÂ are also developing the technology for notebook computers.
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ALMADEN, CALIFORNIA -- IBM has begun work on new technologies designed to boost the capacity of tape storage devices by 250 times. Using "nanopatterning" techniques derived from the company's microprocessor division, researchers say they expect to one day build cartridges that can store as much as 100TB of data.
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By Subashini Selvaratnam  INTEL Corp is working on a new 45-nanometre (nm) transistor technology which will boost the processing speeds in personal computers (PCs), laptops and servers.
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Using electric fields to alter the electrical properties of a carbon nanotube on the fly makes for a key nanoscale electronic component.