text: # Sĭk (nguòng-só)
  Chăng-kō̤ Mìng-dĕ̤ng-ngṳ̄ Háng-cê gì bēng-buōng. / 參考閩東語漢字其版本。
  Sĭk (矽), iâ hô̤ lā̤ giĕ (硅) hĕ̤k-ciā giĕ-só (珪素), sê siŏh cṳ̄ng hĭ-gĭng-sṳ̆k nguòng-só.  Nguòng-cṳ̄ sê̤ṳ-só sê 14, huá-hŏk hù-hô̤ sê Si.
title: Sĭk (nguòng-só)
wikitext: {{twinLAT|硅}}
  {{Infobox element
  |name=sĭk
  |enname=silicon
  |laname=silicium
  |alt name=giĕ
  |number=14
  |symbol=Si
  |appearance=crystalline, reflective with bluish-tinged faces
  |image name=SiliconCroda.jpg
  |image size=
  |image name comment=
  |image name 2=Silicon Spectra.jpg
  |image name 2 comment=Spectral lines of silicon
  |left=[[lé̤ṳ]]
  |right=[[Lìng (nguòng-só)|lìng]]
  |above=[[táng]]
  |below=[[germanium|Gecmani]]
  |series=lôi-gĭng-sṳ̆k
  |series comment=
  |group=14
  |period=3
  |block=p
  |series color=
  |atomic mass=28.085
  |atomic mass ref=<ref name="CIAAW">[http://www.ciaaw.org/pubs/TSAW2013_xls.xls Conventional Atomic Weights 2013]. [[Commission on Isotopic Abundances and Atomic Weights]]</ref>
  |atomic mass 2=
  |atomic mass comment=(28.084–28.086)<ref name="IUPAC">[http://www.ciaaw.org/atomic-weights.htm Standard Atomic Weights 2013]. [[Commission on Isotopic Abundances and Atomic Weights]]</ref>
  |electron configuration=&#91;[[neon|Ne]]&#93; 3s<sup>2</sup> 3p<sup>2</sup>
  |electrons per shell=2, 8, 4
  |color=
  |phase=gó-tā̤
  |phase comment=
  |density gplstp=
  |density gpcm3nrt=2.3290
  |density gpcm3nrt 2=
  |density gpcm3mp=2.57
  |melting point K=1687
  |melting point C=1414
  |melting point F=2577
  |boiling point K=3538
  |boiling point C=3265
  |boiling point F=5909
  |triple point K=
  |triple point kPa=
  |critical point K=
  |critical point MPa=
  |heat fusion=50.21
  |heat fusion 2=
  |heat vaporization=383
  |heat capacity=19.789
  |vapor pressure 1=1908
  |vapor pressure 10=2102
  |vapor pressure 100=2339
  |vapor pressure 1 k=2636
  |vapor pressure 10 k=3021
  |vapor pressure 100 k=3537
  |vapor pressure comment=
  |crystal structure=diamond cubic
  |oxidation states='''4''', 3, 2, 1<ref>{{cite journal|author=Ram, R. S.|title=Fourier Transform Emission Spectroscopy of the A2D–X2P Transition of SiH and SiD|url=http://bernath.uwaterloo.ca/media/184.pdf|journal=J. Mol. Spectr.|volume=190|pages=341–352|year=1998|pmid=9668026|display-authors=etal|accessdate=2018-06-03|archive-date=2012-02-09|archive-url=https://web.archive.org/web/20120209151548/http://bernath.uwaterloo.ca/media/184.pdf|deadurl=yes}}</ref> −1, −2, −3, '''−4'''
  |oxidation states comment=(an [[amphoterism|amphoteric]] oxide)
  |electronegativity=1.90
  |number of ionization energies=4
  |ionization energy 1=786.5
  |ionization energy 2=1577.1
  |ionization energy 3=3231.6
  |atomic radius=111
  |atomic radius calculated=
  |covalent radius=111
  |Van der Waals radius=210
  |magnetic ordering=[[Diamagnetism|diamagnetic]]
  |magnetic ordering ref=<ref>[http://www-d0.fnal.gov/hardware/cal/lvps_info/engineering/elementmagn.pdf Magnetic susceptibility of the elements and inorganic compounds], in {{RubberBible86th}}</ref>
  |electrical resistivity=
  |electrical resistivity at 0=
  |electrical resistivity at 20=2.3{{e|3}}
  |electrical resistivity at 20 ref=<ref name="Eranna2014">{{cite book|author=Eranna, Golla |title=Crystal Growth and Evaluation of Silicon for VLSI and ULSI|url=http://books.google.com/books?id=bo6ZBQAAQBAJ&pg=PA7|date=2014|publisher=CRC Press|isbn=978-1-4822-3281-3|page=7}}</ref>
  |thermal conductivity=149
  |thermal conductivity 2=
  |thermal diffusivity=
  |thermal expansion=
  |thermal expansion at 25=2.6
  |speed of sound=
  |speed of sound rod at 20=8433<!-- Source : Elastic Waves in Solids, by E. Dieulesaint and D. Royer -->
  |speed of sound rod at r.t.=
  |Young's modulus=130–188
  |Young's modulus ref=<ref name=hopcroft>{{cite journal
   |doi=10.1109/JMEMS.2009.2039697|title=What is the Young's Modulus of Silicon?
   |year=2010
   |last1=Hopcroft|first1=Matthew A.|last2=Nix|first2=William D.|last3=Kenny|first3=Thomas W.
   |journal=Journal of Microelectromechanical Systems|volume=19|issue=2|pages=229
   |url=http://silicon.reddogresearch.com/}}</ref>
  |Shear modulus=51–80
  |Shear modulus ref=<ref name=hopcroft/>
  |Bulk modulus=97.6
  |Bulk modulus ref=<ref name=hopcroft/>
  |Poisson ratio=0.064–0.28
  |Poisson ratio ref=<ref name=hopcroft/>
  |Mohs hardness=7
  |Vickers hardness=
  |Brinell hardness=
  |CAS number=7440-21-3
  |band gap=1.12
  |isotopes=
  {{Infobox element/isotopes stable | mn=28 | sym=Si | na=92.23% | n=14 |firstlinks=yes}}
  {{Infobox element/isotopes stable | mn=29 | sym=Si | na=4.67% | n=15 |firstlinks=no}}
  {{Infobox element/isotopes stable | mn=30 | sym=Si | na=3.1% | n=16 |firstlinks=no}}
  {{infobox element/isotopes decay | mn=32 | sym=Si | na=[[trace radioisotope|trace]] | hl=[[1 E9 s|153&nbsp;y]] | dm=[[beta emission|β<sup>−</sup>]] | de=13.020 | link1=phosphorus-32 | pn=32 | ps=P }}
  |isotopes comment=
  |predicted by=[[Antoine Lavoisier]]
  |prediction date=1787
  |discovery and first isolation by=[[Jöns Jacob Berzelius]]<ref>{{cite journal|title=The discovery of the elements: XII. Other elements isolated with the aid of potassium and sodium: beryllium, boron, silicon, and aluminum|last=Weeks|first=Mary Elvira|authorlink=Mary Elvira Weeks|year=1932|journal=Journal of Chemical Education|volume=9|issue=8|pages=1386–1412|bibcode=1932JChEd...9.1386W |doi=10.1021/ed009p1386 }}</ref><ref>{{cite journal| year=2007| journal=Russian Journal of Applied Chemistry| doi=10.1134/S1070427207120397|title=Silicon era|last1=Voronkov|first1=M. G.|volume=80|page=2190| issue=12}}</ref>
  |discovery date=1823
  |naming=after Latin 'silex' or 'silicis', meaning [[flint]]
  |named by= [[Thomas Thomson (chemist)|Thomas Thomson]]
  |named date=1817
  |history comment label=
  |history comment=
  }}
  '''Sĭk''' (矽), iâ hô̤ lā̤ '''giĕ''' (硅) hĕ̤k-ciā '''giĕ-só''' (珪素), sê siŏh cṳ̄ng [[hĭ-gĭng-sṳ̆k]] [[huá-hŏk nguòng-só|nguòng-só]].  [[Nguòng-cṳ̄ sê̤ṳ-só]] sê 14, huá-hŏk hù-hô̤ sê Si.
  
  ==Chăng-kō̤ cṳ̆-lâiu==
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  [[分類:Huá-hŏk nguòng-só]]